- Resistors[45]
- Contact Person : Ms. Hu Shirley
- Company Name : EBG Shenzhen Ltd.
- Tel : 86-755-26553391
- Fax : 86-755-26639341
- Address : Guangdong,SHENZHEN,5FLR 23# BLD SHENZHEN Science & Industry Park, NANTOU , SHENZHEN , CHINA
- Country/Region : China
- Zip : 518057
AS Series SMD Precision Metal Film resistor
Detailed Product Description
AS Series SMD Precision Metal Film resistors
Dimensions(mm)
Type | L | W | T | D1 | D2 |
AS02(0402) | 1.00±0.05 | 0.50±0.05 | 0.32±0.10 | 0.25±0.10 | 0.20±0.10 |
AS03(0603) | 1.60±0.10 | 0.80±0.10 | 0.45±0.10 | 0.30±0.20 | 0.30±0.20 |
AS05(0805) | 2.00±0.15 | 1.25±0.15 | 0.55±0.10 | 0.30±0.20 | 0.40±0.25 |
AS06(1206) | 3.05±0.15 | 1.55±0.15 | 0.55±0.10 | 0.50±0.30 | 0.40±0.25 |
AS10(2010) | 5.00±0.20 | 2.45±0.15 | 0.60±0.15 | 0.60±0.30 | 0.50±0.25 |
AS12(2512) | 6.35±0.20 | 3.15±0.15 | 0.60±0.10 | 0.60±0.30 | 0.55±0.25 |
AS25(1225) | 3.10±0.15 | 6.30±0.15 | 0.90±0.15 | 0.60±0.30 | 0.55±0.25 |
AS37(3720) | 200±0.20 | 3.75±0.20 | 0.60±0.10 | 0.40±0.20 | 0.40±0.20 |
AS75(7520) | 2.00±0.20 | 7.50±0.30 | 0.60±0.10 | 0.40±0.20 | 0.40±0.20 |
Main Group C Test Item
Item | Requirement | Method |
TCR | As Spec | MIL-STD-202F method 304 25~ -55,25~ +125 |
Short Time Overload | ±(0.5%+0.05Ω) | JIS-C-5202-5.5 2.5 times rated power or max overloading voltage 5s |
Dielectric Withstand Voltage | By type | MIL-STD-202F method 301 apply max overload voltage for 60s |
Insulation Resistance | >1000 MΩ | MIL-STD-202F method 302 apply 100Vdc for 60s |
Thermal Shock | ±(0.5%+0.05Ω) | MIL-STD-202F method 107G -55~ +150, 100 cycles |
Load Life | ±(1%+0.05Ω) | MIL-STD-202F method 108A rated power,70,1.5h on,0.5h off,1000h |
Humidity (Steady state) | ±(0.5+0.05Ω) | MIL-STD-202F method 103B Rated power,40,>90%RH,1.5h on,0.5h off,1000h |
Resistance to Dry Heat | ±(0.5%+0.05Ω) | JIS-C-5202-7.2 155,without load,96h |
Low Temp Operation | ±(0.5%+0.05Ω) | JIS-C-5202-7.1 1h,-65 rated power 45 minutes |
Solderability | >95% coverage | MIL-STD-202F method 208H 235±5,2±0.5s |
Resistance to Soldering Heat | ±(0.5%+0.05Ω) | MIL-STD-202F method 210E 260±5,10±1s |